ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED-THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGES

被引：29

作者：

ANANTHARAM, V ^{[1
]}

BHAT, KN ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST,DEPT ELECT & SYST ENGN,TROY,NY 12181

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19960

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：939 / 945

页数：7

共 14 条

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