OXYGEN SEGREGATION AND MICROSCOPIC INHOMOGENEITY IN CZOCHRALSKI SILICON

被引：23

作者：

LIN, W ^{[1
]}

STAVOLA, M ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 06期

关键词：

D O I：

10.1149/1.2114135

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1412 / 1416

页数：5

共 17 条

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LOGAN, RA .

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[7] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

[8] OXYGEN SEGREGATION IN CZOCHRALSKI SILICON GROWTH [J].

LIN, W ;

HILL, DW .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :1082-1085

[9]

Lin W., 1983, Silicon Processing, P24, DOI 10.1520/STP36157S

[10]

MCDONALD RS, 1958, GROWTH PERFECTION CR, P361

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