RAPID ANALYSIS OF SIPOS FILMS BY ELASTIC BACKSCATTERING AND RBS

被引：13

作者：

JEYNES, C ^{[1
]}

MILES, RE ^{[1
]}

BOLT, M ^{[1
]}

SIMMONS, JG ^{[1
]}

机构：

[1] UNIV BRADFORD,DEPT ELECTR & ELECT ENGN,BRADFORD BD7 1DP,W YORKSHIRE,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1986年 / 15卷 / 1-6期

关键词：

D O I：

10.1016/0168-583X(86)90302-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：275 / 279

页数：5

共 7 条

[1] MEV PROTON BACKSCATTERING ANALYSIS OF ION-IMPLANTED POLYMERS [J].

CALCAGNO, L ;

FOTI, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :288-292

[2] ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY USING SI-RICH SIO2 INJECTORS AND A FLOATING POLYCRYSTALLINE SILICON STORAGE LAYER [J].

DIMARIA, DJ ;

DEMEYER, KM ;

SERRANO, CM ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4825-4842

[3] HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF SIPOS PROCESS [J].

MATSUSHITA, T ;

AOKI, T ;

OHTSU, T ;

YAMOTO, H ;

HAYASHI, H ;

OKAYAMA, M ;

KAWANA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :826-830

[4] SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED-CIRCUITS [J].

MOCHIZUKI, H ;

AOKI, T ;

YAMOTO, H ;

OKAYAMA, M ;

ABE, M ;

ANDO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :41-48

[5]

RAUHALA E, 1986, IBA 85, P337

[6]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[7] THE ROLE OF HYDROGEN IN THE DEPOSITION, COMPOSITION, AND STRUCTURE OF SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS [J].

VERSTEGEN, B ;

HABRAKEN, FHPM ;

VANDERWEG, WF ;

HOLSBRINK, J ;

SNIJDER, J .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2766-2770

← 1 →