EFFECT OF DISLOCATION OF ENERGY RESOLUTION OF HIGH-PURITY GERMANIUM DETECTORS

被引：16

作者：

GLASOW, PA

HALLER, EE

机构：

[1] SIEMENS ZENT FORSCH & ENTWICKLUNG, ERLANGEN, FED REP GER

[2] UNIV CALIF, LAWRENCE BERKELEY LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 01期

关键词：

D O I：

10.1109/TNS.1976.4328221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：92 / 96

页数：5

共 9 条

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[8] CORRELATION OF LOCAL TRAPPING WITH CRYSTAL DEFECTS BY DIRECT OBSERVATION OF ELECTRON LOSS IN A COAXIAL GE(LI) DETECTOR [J].

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[9] EFFECTS OF CARRIER TRAPPING IN SEMICONDUCTOR GAMMA-RAY SPECTROMETERS [J].

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