EFFECTS OF LOCAL ENVIRONMENT ON LOCALIZED VIBRATIONAL-MODES OF ALUMINUM IN ALXGA1-XAS

被引:8
作者
ONO, H
BABA, T
机构
[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 17期
关键词
D O I
10.1103/PhysRevB.42.11423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Aluminum-related localized vibrational modes in samples of AlxGa1-xAs, which were grown by molecular-beam epitaxy were investigated using Fourier-transform infrared spectroscopy. Three distinct satellite peaks were observed at 358.0, 365.8, and 366.8 cm-1 around the primary peak, due to isolated Al atoms in dilute Alx Ga1-xAs alloys. One of the satellite peaks did not appear in a sample consisting of one monolayer of AlxGa1-xAs sandwiched by GaAs. The satellite peaks are concluded to result from an Al atom perturbed by another Al atom occupying a second-nearest-neighbor site. Three additional small satellite peaks were also observed in alloy samples. We propose a model in which the latter three peaks are caused by an Al atom at a fourth-nearest- neighbor site. © 1990 The American Physical Society.
引用
收藏
页码:11423 / 11425
页数:3
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