ANDERSON TRANSITION IN ACCUMULATION LAYER OF A-SI-H THIN-FILM TRANSISTOR

被引：5

作者：

LEROUX, T

CHENEVASPAULE, A

机构：

[1] CEA, Grenoble, Fr, CEA, Grenoble, Fr

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

D O I：

10.1016/0022-3093(85)90693-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：443 / 446

页数：4

共 8 条

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[3]

LEROUX T, SOLID STATE ELECTRON

[4]

LEROUX T, 1984, THESIS U GRENOBLE FR

[5]

MARSHALL JM, 1985, SOLID STATE COM, V54, pR2

[6] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS [J].

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HACK, M .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3831-3842

[7] CALCULATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN HYDROGENATED AMORPHOUS-SILICON [J].

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ADLER, D .

SOLID STATE COMMUNICATIONS, 1985, 54 (01) :15-17

[8] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

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