CONTROL AND SYSTEM-DESIGN FOR THE CZOCHRALSKI CRYSTAL-GROWTH PROCESS

被引：3

作者：

GEVELBER, MA ^{[1
]}

STEPHANOPOULOS, G ^{[1
]}

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF DYNAMIC SYSTEMS MEASUREMENT AND CONTROL-TRANSACTIONS OF THE ASME | 1993年 / 115卷 / 01期

关键词：

D O I：

10.1115/1.2897385

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

An expanded set of control objectives is proposed for the Czochralski crystal growth process. Consideration of the thermal stress near the interface yields an operating regime specification in terms of interface shape. A lumped parameter model is used to determine the performance of alternate inputs and outputs. Based on these considerations, a new control structure is proposed to maintain crystal diameter, interface shape, and thermal gradients throughout the batch growth cycle. The performance of alternative control structures are evaluated.

引用

页码：115 / 121

页数：7

共 15 条

[1]

ATHANS M, 1966, OPTIMAL CONTROL

[2] RADIATIVE HEAT-EXCHANGE IN CZOCHRALSKI CRYSTAL-GROWTH [J].