STUDY OF EFFECT OF PERIPHERAL INJECTION IN BIPOLAR-TRANSISTORS USING SIMPLIFIED COMPUTER-ANALYSIS

被引：4

作者：

KUMAR, RC ^{[1
]}

ROULSTON, DJ ^{[1
]}

CHAMBERLAIN, SG ^{[1
]}

机构：

[1] UNIV WATERLOO, DEPT ELECT ENGN, WATERLOO N2L 3G1, ONTARIO, CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：86 / 91

页数：6

共 15 条

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[7] TRANSISTOR CUTOFF FREQUENCY FALLOFF AT HIGH CURRENTS [J].

REY, G .

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[8] SIMPLIFIED COMPUTER-AIDED ANALYSIS OF DOUBLE-DIFFUSED TRANSISTORS INCLUDING 2-DIMENSIONAL HIGH-LEVEL EFFECTS [J].

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SEHGAL, J ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :809-&

[9] LOW CURRENT BASE-COLLECTOR BOUNDARY-CONDITIONS IN GHZ FREQUENCY TRANSISTORS [J].

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[10]

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