DAMAGE PROFILES IN MGO AFTER ION-IMPLANTATION

被引：9

作者：

FRIEDLAND, E

HAYES, M

机构：

[1] Department of Physics, University of Pretoria, Pretoria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 65卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95051-R

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Damage depths in MgO <100> after implantation of 150 keV argon, krypton and xenon ions were analyzed by means of alpha-particle channeling in a backscattering geometry. Ion fluences ranged between 4 x 10(14) to 1 x 10(16) at. cm-2 and all implantations were performed at room temperature. Even at the highest ion dose only partial lattice disorder was observed, which is typical for ionic crystals. However, in all cases damage depths exceeded the projected ion ranges significantly. This effect becomes more pronounced with increasing ion mass.

引用

页码：287 / 290

页数：4

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