VARIATION OF HYDROGEN-BONDING, DEPTH PROFILES, AND SPIN-DENSITY IN PLASMA-DEPOSITED SILICON-NITRIDE AND OXYNITRIDE FILM WITH DEPOSITION MECHANISM

被引：47

作者：

NGUYEN, VS

LANFORD, WA

RIEGER, AL

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12223

[2] BROWN UNIV,DEPT CHEM,PROVIDENCE,RI 02901

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 05期

关键词：

D O I：

10.1149/1.2108778

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：970 / 974

页数：5

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