LUMINESCENCE OF NARROW RIE ETCHED IN1-XGAXAS/INP AND GAAS/GA1-XALXAS QUANTUM WIRES

被引：7

作者：

MARZIN, JY

IZRAEL, A

BIROTHEAU, L

SERMAGE, B

ROY, N

AZOULAY, R

ROBEIN, D

BENCHIMOL, JL

HENRY, L

THIERRYMIEG, V

LADAN, FR

TAYLOR, L

机构：

[1] CNRS,L2M,F-92220 BAGNEUX,FRANCE

[2] ROYAL SIGNALS & RADAR ESTAB,DRA,DIV ELECTR,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91131-T

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present low temperature optical data obtained on narrow quantum wires, fabricated with reactive ion etching and MOCVD overgrowth, in both In1-xGaxAs/InP and GaAs/Ga1-xAlxAs systems. One-dimensional quantum confinement effects are observed in both cases for the lowest lateral sizes (L(x)), in which carrier lifetimes remain of the order of one nanosecond. For In1-xGaxAs/InP wires (L(x) down to 15 nm), quantum shifts of the photoluminescence peak (up to 30 meV) are observed. For GaAs/Ga1-xAlxAs wires (L(x) down to 20 nm), we present photoluminescence excitation spectra showing additional lateral confinement effects, concerning mainly the polarization of the observed transitions.

引用

页码：253 / 256

页数：4

共 14 条

[11] POLARIZATION DEPENDENT ABSORPTION-SPECTRA IN QUANTUM WIRE STRUCTURES [J].