FORMATION OF INPLANE SUPERLATTICE AND QUANTUM WIRE STATES IN GRID INSERTED HETEROSTRUCTURES WITH PERIOD OF 80-160 A - ANISOTROPY OF ELECTRONIC STATES

被引：31

作者：

TANAKA, M ^{[1
]}

MOTOHISA, J ^{[1
]}

SAKAKI, H ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI IIS,MINATO KU,TOKYO 106,JAPAN

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90338-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown by molecular beam epitaxy (MBE) novel in-plane superlattice (IPSL) structures, in which an array of monolayer (ML)-thick AlAs bars with a period of 80-160 Å is inserted in the GaAs layer. These grid inserted heterostruetures are prepared by depositing 0.5 ML of AlAs during the growth of GaAs on misoriented substrates. We have found anisotropies in both optical and electronic properties, which are in good agreement with theory. These findings demonstrate that the IPSL states are formed in these heterostruetures. © 1990.

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页码：408 / 411

页数：4

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