PASSIVATION KINETICS OF 2 TYPES OF DEFECTS IN POLYSILICON TFT BY PLASMA HYDROGENATION

被引：220

作者：

WU, IW

HUANG, TY

JACKSON, WB

LEWIS, AG

CHIANG, A

机构：

[1] Xerox Palo Alto Research Center, Palo Alto, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 04期

关键词：

D O I：

10.1109/55.75757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects and kinetics of hydrogen passivation on polycrystalline-silicon thin-film transistors (poly-TFT's) are investigated. Based on the response of device parameters with the progress of hydrogenation, two types of defects can be distinguished from the difference in passivation rate. The threshold voltage and subthreshold slope, which are strongly influenced by the density of dangling bond midgap states, have a faster response to hydrogenation. The off-state leakage current and field-effect mobility, related to strain-bond tail states, respond slower to hydrogenation with an onset period of approximately 4 to 12 h depending on the grain size. Since the larger grain size samples showed a longer onset period, the contribution of intragranular defects to the strain-bond tail states appears to be significant

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页码：181 / 183

页数：3

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