ELECTRON CHANNELING AND EBIC STUDIES OF EDGE-SUPPORTED PULLING SILICON SHEETS

被引：6

作者：

TSUO, YS

HURD, JL

MATSON, RJ

CISZEK, TF

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 05期

关键词：

D O I：

10.1109/T-ED.1984.21577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：614 / 618

页数：5

共 14 条

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[9] SEMI-CONTINUOUS EDGE-SUPPORTED PULLING OF SILICON SHEETS [J].

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[10] ELECTRON CHANNELING PATTERNS IN THE SCANNING ELECTRON-MICROSCOPE [J].

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