GROWTH-KINETICS, STRUCTURE AND SURFACE-MORPHOLOGY OF ALN ALPHA-AL2O3 EPITAXIAL LAYERS

被引:12
作者
BUGGE, F [1 ]
EFIMOV, AN [1 ]
PICHUGIN, IG [1 ]
TSAREGORODTSEV, AM [1 ]
CHERNOV, MA [1 ]
机构
[1] VI LENIN ELECT ENGN INST,LENINGRAD 197022,USSR
关键词
D O I
10.1002/crat.2170220117
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:65 / 73
页数:9
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共 19 条
  • [1] X-RAY-DIFFRACTION UNDER SPECULAR REFLECTION CONDITIONS - IDEAL CRYSTALS
    AFANASEV, AM
    MELKONYAN, MK
    [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1983, 39 (MAR): : 207 - 210
  • [2] THERMODYNAMICS OF ALN DEPOSITION BY MEANS OF ALUMINIUM-TRICHLORIDE-AMMONIA PROCESS
    ARNOLD, H
    BISTE, L
    KAUFMANN, T
    [J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (08): : 929 - 937
  • [3] GROWTH, CRYSTALLOGRAPHIC AND ELECTRICAL ASSESSMENT OF EPITAXIAL LAYERS OF ALUMINUM NITRIDE ON CORUNDUM SUBSTRATES
    CALLAGHAN, MP
    PATTERSON, E
    RICHARDS, BP
    WALLACE, CA
    [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 22 (02) : 85 - 98
  • [4] COLLINS AT, 1967, PHYS REV, V157, P833
  • [5] COX GA, 1967, J PHYS CHEM SOLIDS, V28, P545
  • [6] DUFFY MT, 1982, HETEREPITAXIAL SEMIC, P150
  • [7] FRANKKAMENETSKY DA, 1967, DIFFUSIA TEPLOPEREDA
  • [8] GRESKOV FF, 1978, J PRIKLADNOI CHIMII, V51, P2171
  • [9] IOSHIDA S, 1979, J VAC SCI TECHNOL, V16, P990
  • [10] THE GROWTH-KINETICS AND SURFACE-MORPHOLOGY OF GAN EPITAXIAL LAYERS ON SAPPHIRE
    MALINOVSKY, VV
    MARASINA, LA
    PICHUGIN, IG
    TLACZALA, M
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 1982, 17 (07) : 835 - 840