HIGH-RESOLUTION SIMS AND NEUTRON DEPTH PROFILING OF BORON THROUGH OXIDE-SILICON INTERFACES

被引：11

作者：

VANDERVORST, W

SHEPHERD, FR

DOWNING, RG

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

[2] NBS,CTR ANALYT CHEM,WASHINGTON,DC 20234

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573057

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1318 / 1321

页数：4

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[3] NEUTRON DEPTH PROFILING AT THE NATIONAL BUREAU OF STANDARDS [J].

DOWNING, RG ;

FLEMING, RF ;

LANGLAND, JK ;

VINCENT, DH .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :47-51

[4]

EHRSTEIN JR, 1984, ASTM STP, V850

[5]

HOFKER WA, 1975, PHILIPS RES REP S, V8

[6]

LITTMARK U, 1984, TOPICS CURRENT PHYSI

[7] MEASUREMENT OF BORON SEGREGATION AT THE SIO2-SI INTERFACE USING SIMS [J].

MORGAN, AE ;

CHEN, TYJ ;

REED, DA ;

BAKER, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1266-1270

[8]

OECHSNER H, 1984, TOPICS CURRENT PHYSI

[9]

VANDERVORST W, APPL SURF SCI

[10]

ZIEGLER JF, HELIUM STOPPING POWE

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