NEUTRON DEPTH PROFILING AT THE NATIONAL BUREAU OF STANDARDS

被引：51

作者：

DOWNING, RG

FLEMING, RF

LANGLAND, JK

VINCENT, DH

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期

关键词：

D O I：

10.1016/0167-5087(83)90953-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：47 / 51

页数：5

共 13 条

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[3] DOWNING RG, 1982, MICROBEAM ANAL, P219
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[8] DETERMINATION OF LOW-DOSE BORON IMPLANTED CONCENTRATION PROFILES IN SILICON BY (N,ALPHA) REACTION
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[9] SINGLE-CRYSTAL FILTERS FOR NEUTRON SPECTROMETRY
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[10] RANGE PARAMETERS OF BORON IMPLANTED INTO SILICON
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[J]. APPLIED PHYSICS, 1981, 24 (01): : 39 - 43