MEASUREMENT OF BORON SEGREGATION AT THE SIO2-SI INTERFACE USING SIMS

被引：18

作者：

MORGAN, AE ^{[1
]}

CHEN, TYJ ^{[1
]}

REED, DA ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LABS,URBANA,IL 61801

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 03期

关键词：

D O I：

10.1116/1.572393

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1266 / 1270

页数：5

共 6 条

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[5] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J].

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DEGREFTE, HAM ;

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APPLIED SURFACE SCIENCE, 1981, 7 (04) :372-392

[6] CHARGING OF INSULATORS BY ION-BOMBARDMENT AND ITS MINIMIZATION FOR SECONDARY ION MASS-SPECTROMETRY (SIMS) MEASUREMENTS [J].

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