QUANTIFICATION OF DOPANT IMPLANTS IN OXIDIZED SILICON ON SAPPHIRE USING SECONDARY-ION MASS-SPECTROMETRY

被引：14

作者：

DOWSETT, MG ^{[1
]}

PARKER, EHC ^{[1
]}

KING, RM ^{[1
]}

MOLE, PJ ^{[1
]}

机构：

[1] GE CO,HIRST RES CTR,WEMBLEY,MIDDX,ENGLAND

来源：

关键词：

D O I：

10.1063/1.331909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6340 / 6345

页数：6

共 22 条

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[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 199 - 206
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[7] DOWSETT M, UNPUB
[8] DOWSETT MG, INT J MASS SPECTROM
[9] DOWSETT MG, 1982, 111 GEC HIRST RES CT
[10] FURUKAWA S, 1975, ION IMPLANTATION SEM, P143