HEAVY-DOPING EFFECTS AND IMPURITY SEGREGATION DURING HIGH-PRESSURE OXIDATION OF SILICON

被引：9

作者：

FUOSS, D

TOPICH, JA

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：275 / 277

页数：3

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