FINITE BOXES - A GENERALIZATION OF THE FINITE-DIFFERENCE METHOD SUITABLE FOR SEMICONDUCTOR-DEVICE SIMULATION

[1] ADLER MS, 1979, 1 P NASECODE C, P3

[2] TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1297 - 1304

[3] PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J]. SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) : 806 - 822

[4] Curtis A. R., 1974, Journal of the Institute of Mathematics and Its Applications, V13, P121

[5] MODIFIED NEWTON METHOD FOR SOLUTION OF ILL-CONDITIONED SYSTEMS OF NONLINEAR EQUATIONS WITH APPLICATION TO MULTIPLE SHOOTING [J]. NUMERISCHE MATHEMATIK, 1974, 22 (04) : 289 - 315

[6] CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (09) : 821 - 825

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] Forsythe G.E., 1960, FINITE DIFFERENCE ME

[9] FRANZ AF, UNPUB ORDERING DIREC

[10] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970

[1] ADLER MS, 1979, 1 P NASECODE C, P3

[2] TIME-DEPENDENT CARRIER FLOW IN A TRANSISTOR STRUCTURE UNDER NONISOTHERMAL CONDITIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1297 - 1304

[3] PARAMETER SELECTION FOR NEWTON-LIKE METHODS APPLICABLE TO NON-LINEAR PARTIAL-DIFFERENTIAL EQUATIONS [J]. SIAM JOURNAL ON NUMERICAL ANALYSIS, 1980, 17 (06) : 806 - 822

[4] Curtis A. R., 1974, Journal of the Institute of Mathematics and Its Applications, V13, P121

[5] MODIFIED NEWTON METHOD FOR SOLUTION OF ILL-CONDITIONED SYSTEMS OF NONLINEAR EQUATIONS WITH APPLICATION TO MULTIPLE SHOOTING [J]. NUMERISCHE MATHEMATIK, 1974, 22 (04) : 289 - 315

[6] CARRIER MOBILITIES IN SILICON SEMI-EMPIRICALLY RELATED TO TEMPERATURE, DOPING AND INJECTION LEVEL [J]. SOLID-STATE ELECTRONICS, 1981, 24 (09) : 821 - 825

[7] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[8] Forsythe G.E., 1960, FINITE DIFFERENCE ME

[9] FRANZ AF, UNPUB ORDERING DIREC

[10] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970