INTENSITY EFFECTS IN SNO2-SI HETEROJUNCTION SOLAR-CELLS

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] ANDERSON RL, 1976, 2ND ERDA NASA WORKSH

[3] AL P-SILICON MOS PHOTOVOLTAIC CELL [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3982 - 3987

[4] TRANSPORT PROPERTIES OF GLASS-SILICON HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1010 - 1014

[5] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[6] FRANZ S, 1976, 1976 S SOL EN CONV E

[7] FRANZ SL, 1976, MAY NAT WORKSH LOW C

[8] ACCELERATED LIFE TESTS OF SNO2-SI HETEROJUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 468 - 472

[9] NASH TR, 1976, 12TH IEEE PHOT SPEC

[10] PULFREY DL, 1976, IEEE T ELECTRON DEV, V23, P587, DOI 10.1109/T-ED.1976.18458

[1] PHOTOCURRENT SUPPRESSION IN HETEROJUNCTION SOLAR CELLS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (12) : 691 - 693

[2] ANDERSON RL, 1976, 2ND ERDA NASA WORKSH

[3] AL P-SILICON MOS PHOTOVOLTAIC CELL [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3982 - 3987

[4] TRANSPORT PROPERTIES OF GLASS-SILICON HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) : 1010 - 1014

[5] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[6] FRANZ S, 1976, 1976 S SOL EN CONV E

[7] FRANZ SL, 1976, MAY NAT WORKSH LOW C

[8] ACCELERATED LIFE TESTS OF SNO2-SI HETEROJUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 468 - 472

[9] NASH TR, 1976, 12TH IEEE PHOT SPEC

[10] PULFREY DL, 1976, IEEE T ELECTRON DEV, V23, P587, DOI 10.1109/T-ED.1976.18458