PRESSURE-INDUCED EFFECTS IN BULK AMORPHOUS N-TYPE SEMICONDUCTORS (GESE3.5)100-XBIX

被引：34

作者：

BHATIA, KL ^{[1
]}

PARTHASARATHY, G ^{[1
]}

GOPAL, ESR ^{[1
]}

机构：

[1] INDIAN INST SCI,DEPT PHYS,BANGALORE 560012,KARNATAKA,INDIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 69卷 / 2-3期

关键词：

D O I：

10.1016/0022-3093(85)90020-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SEMICONDUCTING GERMANIUM COMPOUNDS

引用

页码：189 / 202

页数：14

共 19 条

[1] HIGH-PRESSURE CLAMP FOR ELECTRICAL MEASUREMENTS UP TO 8 GPA AND TEMPERATURE DOWN TO 77 K [J].

BANDYOPADHYAY, AK ;

NALINI, AV ;

GOPAL, ESR ;

SUBRAMANYAM, SV .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (01) :136-139

[2] STRUCTURAL-CHANGES INDUCED BY BI DOPING IN N-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].

BHATIA, KL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :173-177

[3]

BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151

[4]

Dolezalek F. K., 1970, Journal of Non-Crystalline Solids, V4, P97, DOI 10.1016/0022-3093(70)90025-6

[5] REVERSIBLE QUASI-CRYSTALLIZATION IN GESE2 GLASS [J].

GRIFFITHS, JE ;

ESPINOSA, GP ;

REMEIKA, JP ;

PHILLIPS, JC .

PHYSICAL REVIEW B, 1982, 25 (02) :1272-1286

[6] DISCUSSION ON MECHANISM OF PHOTODOPING [J].

KOKADO, H ;

SHIMIZU, I ;

INOUE, E .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (01) :131-139

[7]

MINOMURA S, 1981, J PHYSIQUE, P181

[8] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .4. ANDERSON LOCALIZATION IN A DISORDERED LATTICE [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (175) :7-&

[9] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[10]

MOTT NF, 1979, ELECTRONIC PROCESSES, pCH9

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