400 MBIT-S TRANSMISSION EXPERIMENT USING 2 MONOLITHIC OPTOELECTRONIC CHIPS

被引：7

作者：

HORIMATSU, T

IWAMA, T

OIKAWA, Y

TOUGE, T

WADA, O

NAKAGAMI, T

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 08期

关键词：

D O I：

10.1049/el:19850226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：319 / 321

页数：3

共 7 条

[1] MONOLITHIC OPTOELECTRONIC INTEGRATION OF A GAALAS LASER, A FIELD-EFFECT TRANSISTOR, AND A PHOTODIODE [J].

BARCHAIM, N ;

LAU, KY ;

URY, I ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :941-943

[2]

HORIMATSU T, 1984, 10TH EUR C OPT COMM

[3]

INOUE K, 1983, 4TH P INT C INT OPT

[4] GIGABIT PER 2ND OPERATION BY MONOLITHICALLY INTEGRATED INGAASP/INP LD-FET [J].

KASAHARA, K ;

HAYASHI, J ;

NOMURA, H .

ELECTRONICS LETTERS, 1984, 20 (15) :618-619

[5] PLANAR MONOLITHIC INTEGRATION OF A PHOTO-DIODE AND A GAAS PRE-AMPLIFIER [J].

KOLBAS, RM ;

ABROKWAH, J ;

CARNEY, JK ;

BRADSHAW, DH ;

ELMER, BR ;

BIARD, JR .

APPLIED PHYSICS LETTERS, 1983, 43 (09) :821-823

[6]

MAKIUCHI M, 1984, INT ELECTRON DEVICES

[7]

WADA O, 1984, INT ELECTRON DEVICES

← 1 →