DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS

被引：257

作者：

ASADA, M

SUEMATSU, Y

机构：

[1] Tokyo Inst of Technology, Dep of, Physical Electronics, Tokyo, Jpn, Tokyo Inst of Technology, Dep of Physical Electronics, Tokyo, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 05期

关键词：

D O I：

10.1109/JQE.1985.1072674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

34

引用

收藏

页码：434 / 442

页数：9

相关论文

共 34 条

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[17] SPECTRAL HOLE-BURNING AND NONLINEAR-GAIN DECREASE IN A BAND-TO-LEVEL TRANSITION SEMICONDUCTOR LASER
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[18] ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 109 - 117
[19] NISHIMURA Y, 1970, SEP P INT QUANT EL C
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