DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS

被引：257

作者：

ASADA, M

SUEMATSU, Y

机构：

[1] Tokyo Inst of Technology, Dep of, Physical Electronics, Tokyo, Jpn, Tokyo Inst of Technology, Dep of Physical Electronics, Tokyo, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 05期

关键词：

D O I：

10.1109/JQE.1985.1072674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

34

引用

收藏

页码：434 / 442

页数：9

相关论文

共 34 条

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[24] SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS
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[27] TANBUNEK T, 1983, THESIS TOKYO I TECH
[28] GAINASP-INP INTEGRATED TWIN-GUIDE LASERS WITH 1ST-ORDER DISTRIBUTED BRAGG REFLECTORS AT 1.3 MU-M WAVELENGTH
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : L137 - L140
[29] ANALYSIS OF GAIN SUPPRESSION IN UNDOPED INJECTION-LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2653 - 2664
[30] CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 743 - 749

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