SPONTANEOUS RECOMBINATION, GAIN AND REFRACTIVE-INDEX VARIATION FOR 1.6 MU-M WAVELENGTH INGAASP-INP LASERS

被引：47

作者：

STUBKJAER, K ^{[1
]}

ASADA, M ^{[1
]}

ARAI, S ^{[1
]}

SUEMATSU, Y ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 08期

关键词：

D O I：

10.1143/JJAP.20.1499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1499 / 1505

页数：7

共 15 条

[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION
ADAMS, AR
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) : L621 - L624
[2] 1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
ARAI, S
SUEMATSU, Y
ITAYA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 197 - 205
[3] NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
ARAI, S
ASADA, M
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ITAYA, Y
TANBUNEK, T
KISHINO, K
[J]. ELECTRONICS LETTERS, 1980, 16 (10) : 349 - 350
[4] SINGLE-PASS GAIN MEASUREMENTS ON OPTICALLY PUMPED ALXGA(1-X)AS-ALYGA(1-Y)AS DOUBLE-HETEROJUNCTION LASER STRUCTURES AT ROOM-TEMPERATURE
BAKKER, J
ACKET, GA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 567 - 573
[5] CASY HC, 1978, HETEROSTRUCTURE LASE
[6] GENERALIZED EXPRESSIONS FOR THE TURN-ON DELAY IN SEMICONDUCTOR-LASERS
DIXON, RW
JOYCE, WB
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) : 4591 - 4595
[7] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[8] 1.6 MU-M WAVELENGTH GAINASP-INP LASERS PREPARED BY 2-PHASE SOLUTION TECHNIQUE
ITAYA, Y
ARAI, S
KISHINO, K
ASADA, M
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 635 - 640
[9] ITAYA Y, 1979, JPN J APPL PHYS, V51, P1975
[10] LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 718 - 726

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