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CONDITION OF SINGLE LONGITUDINAL MODE-OPERATION IN INJECTION-LASERS WITH INDEX-GUIDING STRUCTURE
被引:99
作者
:
论文数:
引用数:
h-index:
机构:
YAMADA, M
[
1
]
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
SUEMATSU, Y
[
1
]
机构
:
[1]
TOKYO INST TECHNOL,DEPT PHYS ELECTR,TOKYO 152,JAPAN
来源
:
IEEE JOURNAL OF QUANTUM ELECTRONICS
|
1979年
/ 15卷
/ 08期
关键词
:
D O I
:
10.1109/JQE.1979.1070105
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
A condition for single longitudinal mode operation (SMO, for short) of index-guided injection lasers is given theoretically and supported by experiment. For SMO, the transverse higher modes must be cut off by using a narrow-width index-guiding waveguide. Inclusion of the spontaneous emission into the lasing field must be reduced by using a thinner active region. In terms of the impurity concentration of the active region, the undoped case is the most stable for temperature variation. A heavily doped active region may also produce SMO. The thermal resistance must be reduced to increase temperature stability. MO with a fixed lasing wavelength is experimentally obtained by temperature control up to an injection current of twice threshold. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:743 / 749
页数:7
相关论文
共 16 条
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GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
BOTEZ, D
TSANG, WT
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0
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0
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UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
TSANG, WT
WANG, S
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0
引用数:
0
h-index:
0
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UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(04)
: 234
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237
[2]
ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
BURNHAM, RD
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PALO ALTO RES CTR,PALO ALTO,CA 94304
PALO ALTO RES CTR,PALO ALTO,CA 94304
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SCIFRES, DR
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PALO ALTO RES CTR,PALO ALTO,CA 94304
PALO ALTO RES CTR,PALO ALTO,CA 94304
SCIFRES, DR
[J].
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: 510
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511
[3]
THRESHOLD BEHAVIOR OF (GAAL)AS-GAAS LASERS AT LOW-TEMPERATURES
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HEWLETT PACKARD LABS,PALO ALTO,CA 94304
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0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
BULL, DJ
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
: 29
-
34
[4]
THEORY OF OPTICAL MASER
LAMB, WE
论文数:
0
引用数:
0
h-index:
0
LAMB, WE
[J].
PHYSICAL REVIEW,
1964,
134
(6A):
: 1429
-
+
[5]
NAKAMURA M, UNPUBLISHED
[6]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
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0
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MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
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(07)
: 427
-
431
[7]
ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS
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NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
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[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
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(01)
: 109
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117
[8]
SCHLOSSER WO, 1973, BELL SYST TECH J, V52, P889
[9]
DEPENDENCE OF LONGITUDINAL MODE STRUCTURE ON INJECTED CARRIER DIFFUSION IN DIODE-LASERS
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XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
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[J].
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1977,
13
(06)
: 403
-
404
[10]
STRUGE MD, 1962, PHYS REV, V123, P768
←
1
2
→
共 16 条
[1]
GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
BOTEZ, D
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
BOTEZ, D
TSANG, WT
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
TSANG, WT
WANG, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA
WANG, S
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(04)
: 234
-
237
[2]
ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
PALO ALTO RES CTR,PALO ALTO,CA 94304
PALO ALTO RES CTR,PALO ALTO,CA 94304
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
机构:
PALO ALTO RES CTR,PALO ALTO,CA 94304
PALO ALTO RES CTR,PALO ALTO,CA 94304
SCIFRES, DR
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(09)
: 510
-
511
[3]
THRESHOLD BEHAVIOR OF (GAAL)AS-GAAS LASERS AT LOW-TEMPERATURES
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
HWANG, CJ
PATEL, NB
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
PATEL, NB
SACILOTTI, MA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
SACILOTTI, MA
PRINCE, FC
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
PRINCE, FC
BULL, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94304
BULL, DJ
[J].
JOURNAL OF APPLIED PHYSICS,
1978,
49
(01)
: 29
-
34
[4]
THEORY OF OPTICAL MASER
LAMB, WE
论文数:
0
引用数:
0
h-index:
0
LAMB, WE
[J].
PHYSICAL REVIEW,
1964,
134
(6A):
: 1429
-
+
[5]
NAKAMURA M, UNPUBLISHED
[6]
TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION
NAMIZAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
MITSUBISHI ELECT CORP,CENT RES LAB,ITAMI,HYOGO,JAPAN
NAMIZAKI, H
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1975,
QE11
(07)
: 427
-
431
[7]
ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS
NISHIMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NIKKEI ELECT NIKKEI MCGRAW HILL INC, EDITORIAL DEPT, Tokyo, TOKYO, JAPAN
NISHIMURA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1974,
13
(01)
: 109
-
117
[8]
SCHLOSSER WO, 1973, BELL SYST TECH J, V52, P889
[9]
DEPENDENCE OF LONGITUDINAL MODE STRUCTURE ON INJECTED CARRIER DIFFUSION IN DIODE-LASERS
STREIFER, W
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
STREIFER, W
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
BURNHAM, RD
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
SCIFRES, DR
[J].
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1977,
13
(06)
: 403
-
404
[10]
STRUGE MD, 1962, PHYS REV, V123, P768
←
1
2
→