DEPENDENCE OF LONGITUDINAL MODE STRUCTURE ON INJECTED CARRIER DIFFUSION IN DIODE-LASERS

被引：23

作者：

STREIFER, W ^{[1
]}

BURNHAM, RD ^{[1
]}

SCIFRES, DR ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 06期

关键词：

D O I：

10.1109/JQE.1977.1069376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：403 / 404

页数：2

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[5] EXCITATION AND DOPING DEPENDENCES OF ELECTRON DIFFUSION LENGTH IN GAAS JUNCTION LASERS [J].

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[6]

MCKELVEY JP, 1966, SOLID STATE SEMICOND, P330

[7] TRANSVERSE-JUNCTION-STRIPE LASERS WITH A GAAS P-N HOMOJUNCTION [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :427-431

[8] ELECTRON-SCATTERING TIMES IN GAAS INJECTION LASERS [J].

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[9]

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[10] SHORT-TIME MODE BEHAVIOR OF GAAS LASERS [J].

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