STUDY OF ELECTROOPTICAL AND BAND MODEL IN IN2O3 THIN-FILMS

Thin films of n-conducting In2O3 are prepared by reactive evaporation of mixture of In2O3 and metallic indium at an O2 atmosphere. Investigations of structural optical and electrical properties of these films have been carried out. Films evaporated under the optimum conditions exhibited complete degeneracy and high transmission in visible region with direct and indirect band gap of 3.65 eV and 2.65 eV. The optical constants n and k were determined from mesurements of transmission T(lambda) of light and the simple method of MANIFACIER. The degeneracy of the carriers results in optical behaviour which can be explained by the DRUDE theory based on the free electron model The optical effective mass of In2O3 films has been calculated from mesurements of the plasma resonance frequency and the dielectric constant in the near infrared region . The films have been found to be n type with resistivity of 8.10(-4) OMEGAcm and carrier density of 1,2 10(20) cm-3 and the conductivity interpreted in terms of ionised impurety scattering All these investigations have contributed to deal a band model of polycristalline In2O3 thin films