IN-SITU X-RAY MEASUREMENTS OF RELAXATION PROCESSES IN SI1-XGEX LAYERS ON SI SUBSTRATE

被引：11

作者：

ZAUMSEIL, P

机构：

[1] Institute of Semiconductor Physics, Frankfurt

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 140卷 / 02期

关键词：

D O I：

10.1002/pssa.2211400212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method is presented to investigate in-situ the relaxation behaviour of strained Si1-xGex layers on silicon substrates using a conventional X-ray powder diffractometer with a high-temperature attachment. It allows by a stair-like ramping of temperature a fast determination of the critical temperature at which relaxation starts. The method was used to investigate the temperature and time dependence of relaxation of SiGe layers grown by chemical vapour deposition. It was found that the relaxation mechanism changes drastically at temperatures above 950-degrees-C.

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页码：421 / 427

页数：7

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