THERMAL-STABILITY OF SI/SI1-XGEX/SI HETEROSTRUCTURES DEPOSITED BY VERY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：8

作者：

JANG, SM ^{[1
]}

KIM, HW ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.107923

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the thermal stability of metastable Si/Si1-xGex/Si strained structures deposited by very low pressure chemical vapor deposition at 620-degrees-C. Samples after furnace anneals at 800-1100-degrees-C for 30 min were characterized by double-crystal x-ray diffraction and plan-view transmission electron microscopy to determine residual strain and misfit dislocation structure. It is found that strains in approximately 1400 angstrom Si/520-700 angstrom Si1-xGex/Si structures with Ge contents of 0.09-0.16 relax gradually at temperatures <950-degrees-C but relax rapidly at temperatures > 950-degrees-C, showing a transition and different mechanisms in the relaxation process. The process, involving a single-kink dislocation mechanism as well as Si-Ge interdiffusion, has been investigated for Si0.87Ge-0.13.

引用

页码：315 / 317

页数：3

共 18 条

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