CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SIGE THIN-FILMS FROM SIH4-GEH4-HCL-H2 GAS-MIXTURES IN AN ATMOSPHERIC-PRESSURE PROCESS

被引：12

作者：

KUHNE, H

MORGENSTERN, T

ZAUMSEIL, P

KRUGER, D

BUGIEL, E

RITTER, G

机构：

[1] Institute of Semiconductor Physics, Frankfurt/Oder

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90033-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical vapour deposition of epitaxial SiGe-layers from SiH4, GeH4, H-2 and HCl gas mixtures has been studied experimentally at atmospheric pressure. The results obtained and those of other authors have been compared with a simple mass-transport-reaction limited deposition model which seems to be valid over a wide range of total pressures and temperatures.

引用

页码：34 / 37

页数：4

共 9 条

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