TIGHT-BINDING STUDY OF TRANSITION IONS IN SILICON AND ELECTRON-PARAMAGNETIC-RES SPECTRA

被引：10

作者：

PECHEUR, P

TOUSSAINT, G

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90236-X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：112 / 115

页数：4

共 10 条

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[2]

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[5] MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

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[7] SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].

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ANDERSON, PW .

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[8] ELECTRONIC STATES OF SIMPLE-TRANSITION-METAL IMPURITIES IN SILICON [J].

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PHYSICAL REVIEW B, 1977, 15 (02) :834-839

[9]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P263

[10]

PECHEUR P, 1981, I PHYS C SER, V49, P147

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