ELECTRON HEATING STUDIES IN SILICON DIOXIDE - LOW FIELDS AND THICK-FILMS

被引：39

作者：

DIMARIA, DJ

FISCHETTI, MV

ARIENZO, M

TIERNEY, E

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1719 / 1726

页数：8

共 29 条

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