ELECTRON-EMISSION FROM DEPLETION LAYERS OF SILICON P-N-JUNCTIONS

被引：11

作者：

VANGORKOM, GGP

HOEBERECHTS, AME

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 07期

关键词：

D O I：

10.1063/1.328114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3780 / 3785

页数：6

共 24 条

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