MODELING OF CHANNEL ENHANCEMENT EFFECTS ON WRITE CHARACTERISTICS OF FAMOS DEVICES

被引：2

作者：

CARD, HC

HEASELL, EL

机构：

[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027

[2] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 11期

关键词：

D O I：

10.1016/0038-1101(76)90111-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：965 / 968

页数：4

共 8 条

[1] REVERSIBLE FLOATING-GATE MEMORY [J].

CARD, HC ;

WORRALL, AG .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2326-2330

[2] FUNCTIONAL MODELING OF NONVOLATILE MOS MEMORY DEVICES [J].

CARD, HC ;

ELMASRY, MI .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :863-870

[3]

CARD HC, 1975, IEEE INT ELECTRON DE, P565

[4] FAMOS - NEW SEMICONDUCTOR CHARGE STORAGE DEVICE [J].

FROHMANB.D .

SOLID-STATE ELECTRONICS, 1974, 17 (06) :517-&

[5] MEMORY BEHAVIOR IN A FLOATING-GATE AVALANCHE-INJECTION MOS (FAMOS) STRUCTURE [J].

FROHMANB.D .

APPLIED PHYSICS LETTERS, 1971, 18 (08) :332-&

[6] CHANNEL SHORTENING IN MOS TRANSISTORS DURING JUNCTION WALK-OUT [J].

NEUGEBAU.CA ;

BURGESS, JF ;

JOYNSON, RE ;

MUNDY, JL .

APPLIED PHYSICS LETTERS, 1971, 19 (08) :287-&

[7] AVALANCHE-INJECTED ELECTRON CURRENTS IN SIO2 AT HIGH INJECTION DENSITIES [J].

VERWEY, JF ;

DEMAAGT, BJ .

SOLID-STATE ELECTRONICS, 1974, 17 (09) :963-971

[8]

Wallmark J. T., 1969, RCA Review, V30, P335

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