LARGE-AREA METAL ORGANIC VAPOR-PHASE EPITAXY FOR OPTOELECTRONIC INTEGRATED-CIRCUITS AND PHOTONICS

Metal-organic vapour phase epitaxy (MOVPE) has demonstrated the capability of producing the most sophisticated multilayer, low-dimensional device structures of InGaAsP on InP with amazing accuracy over large single wafers and even over several wafers in a batch. This is necessary since the optoelectronic devices are characterized by a high complexity and a large aspect ratio which requires extreme uniformity at the epitaxy level. The rotating susceptor reactors have an edge over the static designs in this respect. The replacement of the highly toxic arsine and phosphine with much safer organo-metallic precursors seems quite feasible, adding further credibility to MOVPE as the final industrial answer in integrated optoelectronics.