ON THE BAND OFFSETS OF ALGAAS/GAAS AND BEYOND

[61] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788

[62] TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (22) : 1559 - 1562

[63] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, P1

[64] EVIDENCE OF ORIENTATION INDEPENDENCE OF BAND OFFSET IN ALGAAS/GAAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6890 - 6891

[65] VALENCE BAND OFFSET IN ALAS/GAAS HETEROJUNCTIONS AND THE EMPIRICAL RELATION FOR BAND ALIGNMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1280 - 1284

[66] HIGH MOBILITY HOLE GAS AND VALENCE-BAND OFFSET IN MODULATION-DOPED PARA-ALGAAS/GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 639 - 641

[67] WANG WI, 1985, B AM PHYS SOC, V30, P399

[68] WANG ZG, 1984, J APPL PHYS, V56, P2763

[69] WATANABE MO, 1984, 16TH C SOL STAT DEV, P181

[70] CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL0.35GA0.65AS-GAAS N-PARA-HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2261 - 2263

[61] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (10) : 786 - 788

[62] TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT [J]. PHYSICAL REVIEW LETTERS, 1982, 48 (22) : 1559 - 1562

[63] VANVECHTEN JA, 1980, HDB SEMICONDUCTORS, V3, P1

[64] EVIDENCE OF ORIENTATION INDEPENDENCE OF BAND OFFSET IN ALGAAS/GAAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6890 - 6891

[65] VALENCE BAND OFFSET IN ALAS/GAAS HETEROJUNCTIONS AND THE EMPIRICAL RELATION FOR BAND ALIGNMENT [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1280 - 1284

[66] HIGH MOBILITY HOLE GAS AND VALENCE-BAND OFFSET IN MODULATION-DOPED PARA-ALGAAS/GAAS HETEROJUNCTIONS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 639 - 641

[67] WANG WI, 1985, B AM PHYS SOC, V30, P399

[68] WANG ZG, 1984, J APPL PHYS, V56, P2763

[69] WATANABE MO, 1984, 16TH C SOL STAT DEV, P181

[70] CURRENT SUPPRESSION INDUCED BY CONDUCTION-BAND DISCONTINUITY IN AL0.35GA0.65AS-GAAS N-PARA-HETEROJUNCTION DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) : 2261 - 2263