INFLUENCE OF DRAIN-INDUCED BARRIER LOWERING ON THE DYNAMIC CONDUCTANCE OF SHORT-CHANNEL MOSFETS

[1] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2193 - 2203

[2] INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 457 - 458

[3] SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 254 - 266

[4] A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (02) : 234 - 246

[5] HAO C, 1985, SOLID STATE ELECTRON, V28, P1025, DOI 10.1016/0038-1101(85)90034-6

[6] MULS PA, 1978, ADV ELECTRON EL PHYS, V47, P197

[7] SWANSSON R, 1975, P IEEE INT SOLID STA, P110

[1] CARRIER-DENSITY FLUCTUATIONS AND IGFET MOBILITY NEAR THRESHOLD [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2193 - 2203

[2] INFLUENCE OF SOURCE-DRAIN SERIES RESISTANCE ON MOSFET FIELD-EFFECT MOBILITY [J]. ELECTRONICS LETTERS, 1985, 21 (11) : 457 - 458

[3] SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 254 - 266

[4] A PARAMETRIC SHORT-CHANNEL MOS-TRANSISTOR MODEL FOR SUBTHRESHOLD AND STRONG INVERSION CURRENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (02) : 234 - 246

[5] HAO C, 1985, SOLID STATE ELECTRON, V28, P1025, DOI 10.1016/0038-1101(85)90034-6

[6] MULS PA, 1978, ADV ELECTRON EL PHYS, V47, P197

[7] SWANSSON R, 1975, P IEEE INT SOLID STA, P110