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A TUNABLE CMOS-DRAM VOLTAGE LIMITER WITH STABILIZED FEEDBACK-AMPLIFIER
被引:15
作者
:
HORIGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
HORIGUCHI, M
AOKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
AOKI, M
ETOH, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
ETOH, J
TANAKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
TANAKA, H
IKENAGA, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
IKENAGA, S
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
ITOH, K
KAJIGAYA, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
KAJIGAYA, K
KOTANI, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
KOTANI, H
OHSHIMA, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
OHSHIMA, K
MATSUMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
MATSUMOTO, T
机构
:
[1]
HITACHI VLSI ENGN CORP LTD,KODAIRA,TOKYO,JAPAN
[2]
HITACHI LTD,CTR DEVICE DEV,OHME,TOKYO,JAPAN
来源
:
IEEE JOURNAL OF SOLID-STATE CIRCUITS
|
1990年
/ 25卷
/ 05期
关键词
:
D O I
:
10.1109/4.62133
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
This paper presents two developments for a CMOS-DRAM voltage limiter: a precise internal-voltage generator, and a stabilized driver composed of a feedback amplifier with compensation. The voltage limiter’s features include generating a PMOS-VT difference, being capable of voltage tuning with fuse trimming, and compensation in the driver circuit through zero insertion. It provides a voltage insusceptible to supply-voltage and substrate-voltage bouncings, temperature variation, and process fluctuation, while ensuring the feedback-loop stability with a phase margin of 55° for a time-dependent load of DRAM circuit. The proposed circuits are experimentally evaluated through their implementation in a 16-Mb CMOS DRAM. A temperature dependency of 1.4 mV/°C and a voltage deviation within ± 10% for process fluctuation are achieved. The voltage is stabilized within ±3% for Vcc bounce and ± 10% for memory operation. © 1990 IEEE
引用
收藏
页码:1129 / 1135
页数:7
相关论文
共 11 条
[1]
NEW NMOS TEMPERATURE-STABLE VOLTAGE REFERENCE
BLAUSCHILD, RA
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论文数:
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h-index:
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MEYER, RG
TUCCI, PA
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0
机构:
SIGNET CORP,DEPT CONSUMER ANALOG,TELECOMMUNICAT GRP,SUNNYVALE,CA 94088
TUCCI, PA
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
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774
[2]
AN EXPERIMENTAL 16-MBIT DRAM WITH REDUCED PEAK-CURRENT NOISE
CHIN, D
论文数:
0
引用数:
0
h-index:
0
CHIN, D
KIM, CY
论文数:
0
引用数:
0
h-index:
0
KIM, CY
CHOI, YH
论文数:
0
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0
h-index:
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CHOI, YH
MIN, DS
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0
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MIN, DS
HONG, SH
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0
引用数:
0
h-index:
0
HONG, SH
CHOI, H
论文数:
0
引用数:
0
h-index:
0
CHOI, H
CHO, S
论文数:
0
引用数:
0
h-index:
0
CHO, S
TAE, YC
论文数:
0
引用数:
0
h-index:
0
TAE, YC
PARK, CJ
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0
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0
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PARK, CJ
SHIN, YS
论文数:
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0
h-index:
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SHIN, YS
SUH, KY
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0
引用数:
0
h-index:
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SUH, KY
[J].
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1989,
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1197
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FUJII S, 1989, FEB ISSCC, P248
[4]
A NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICROMETER HIGH-DENSITY DRAMS
FURUYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
FURUYAMA, T
WATANABE, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
WATANABE, Y
OHSAWA, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
OHSAWA, T
WATANABE, S
论文数:
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引用数:
0
h-index:
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机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
WATANABE, S
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1987,
22
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-
441
[5]
GRAY PR, 1984, ANAL DESIGN ANALOG I, pCH9
[6]
DUAL-OPERATING-VOLTAGE SCHEME FOR A SINGLE 5-V 16-MBIT DRAM
HORIGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
HORIGUCHI, M
AOKI, M
论文数:
0
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ITOH, K
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引用数:
0
h-index:
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HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
ITOH, K
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
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23
(05)
: 1128
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1132
[7]
ITOH K, 1984, FEB IEEE INT SOL STA, P282
[8]
A 1-MBIT BICMOS DRAM USING TEMPERATURE-COMPENSATION CIRCUIT TECHNIQUES
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0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
KITSUKAWA, G
ITOH, K
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h-index:
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[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1989,
24
(03)
: 597
-
602
[9]
NAKAGOME Y, 1990, JUN S VLSI CIRC
[10]
MOS VOLTAGE REFERENCE BASED ON POLYSILICON GATE WORK FUNCTION DIFFERENCE
OGUEY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
OGUEY, HJ
GERBER, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
GERBER, B
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(03)
: 264
-
269
←
1
2
→
共 11 条
[1]
NEW NMOS TEMPERATURE-STABLE VOLTAGE REFERENCE
BLAUSCHILD, RA
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,DEPT CONSUMER ANALOG,TELECOMMUNICAT GRP,SUNNYVALE,CA 94088
BLAUSCHILD, RA
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,DEPT CONSUMER ANALOG,TELECOMMUNICAT GRP,SUNNYVALE,CA 94088
MULLER, RS
MEYER, RG
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,DEPT CONSUMER ANALOG,TELECOMMUNICAT GRP,SUNNYVALE,CA 94088
MEYER, RG
TUCCI, PA
论文数:
0
引用数:
0
h-index:
0
机构:
SIGNET CORP,DEPT CONSUMER ANALOG,TELECOMMUNICAT GRP,SUNNYVALE,CA 94088
TUCCI, PA
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1978,
13
(06)
: 767
-
774
[2]
AN EXPERIMENTAL 16-MBIT DRAM WITH REDUCED PEAK-CURRENT NOISE
CHIN, D
论文数:
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0
CHIN, D
KIM, CY
论文数:
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引用数:
0
h-index:
0
KIM, CY
CHOI, YH
论文数:
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引用数:
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h-index:
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MIN, DS
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HONG, SH
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引用数:
0
h-index:
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HONG, SH
CHOI, H
论文数:
0
引用数:
0
h-index:
0
CHOI, H
CHO, S
论文数:
0
引用数:
0
h-index:
0
CHO, S
TAE, YC
论文数:
0
引用数:
0
h-index:
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TAE, YC
PARK, CJ
论文数:
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h-index:
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PARK, CJ
SHIN, YS
论文数:
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引用数:
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h-index:
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SHIN, YS
SUH, KY
论文数:
0
引用数:
0
h-index:
0
SUH, KY
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1989,
24
(05)
: 1191
-
1197
[3]
FUJII S, 1989, FEB ISSCC, P248
[4]
A NEW ON-CHIP VOLTAGE CONVERTER FOR SUBMICROMETER HIGH-DENSITY DRAMS
FURUYAMA, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
FURUYAMA, T
WATANABE, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
WATANABE, Y
OHSAWA, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
OHSAWA, T
WATANABE, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
TOSHIBA CORP,VLSI RES CTR,KAWASAKI 210,JAPAN
WATANABE, S
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1987,
22
(03)
: 437
-
441
[5]
GRAY PR, 1984, ANAL DESIGN ANALOG I, pCH9
[6]
DUAL-OPERATING-VOLTAGE SCHEME FOR A SINGLE 5-V 16-MBIT DRAM
HORIGUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
HORIGUCHI, M
AOKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
AOKI, M
TANAKA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
TANAKA, H
ETOH, J
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
ETOH, J
NAKAGOME, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
NAKAGOME, Y
IKENAGA, S
论文数:
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引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
IKENAGA, S
KAWAMOTO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
KAWAMOTO, Y
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
ITOH, K
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1988,
23
(05)
: 1128
-
1132
[7]
ITOH K, 1984, FEB IEEE INT SOL STA, P282
[8]
A 1-MBIT BICMOS DRAM USING TEMPERATURE-COMPENSATION CIRCUIT TECHNIQUES
KITSUKAWA, G
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
KITSUKAWA, G
ITOH, K
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
ITOH, K
HORI, R
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
HORI, R
KAWAJIRI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
KAWAJIRI, Y
WATANABE, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
WATANABE, T
KAWAHARA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
KAWAHARA, T
MATSUMOTO, T
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
MATSUMOTO, T
KOBAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO,JAPAN
KOBAYASHI, Y
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1989,
24
(03)
: 597
-
602
[9]
NAKAGOME Y, 1990, JUN S VLSI CIRC
[10]
MOS VOLTAGE REFERENCE BASED ON POLYSILICON GATE WORK FUNCTION DIFFERENCE
OGUEY, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
OGUEY, HJ
GERBER, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
UNIV NEUCHATEL,CH-2000 NEUCHATEL,SWITZERLAND
GERBER, B
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(03)
: 264
-
269
←
1
2
→