MODIFICATION OF SILICON SURFACE USING ATOMIC-FORCE MICROSCOPE WITH CONDUCTING PROBE

被引：79

作者：

YASUTAKE, M ^{[1
]}

EJIRI, Y ^{[1
]}

HATTORI, T ^{[1
]}

机构：

[1] MUSASHI INST TECHNOL, DEPT ELECT & ELECTR ENGN, SETAGAYA KU, TOKYO 158, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1993年 / 32卷 / 7B期

关键词：

ATOMIC FORCE MICROSCOPE; OXIDATION; NANOLITHOGRAPHY; OXIDATION MECHANISM; ELECTRIC-FIELD-ENHANCED OXIDATION;

D O I：

10.1143/JJAP.32.L1021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that nearly atomically flat Si(100) surfaces passivated with native oxides can be modified by applying a negative potential to the conducting probe of an atomic force microscope (AFM) with respect to the silicon substrate. It was verified from the detection of O(KLL) Auger electrons and Si(LVV) Auger electrons excited by the electron beam that silicon surfaces are modified by the oxidation of silicon. This oxidation is enhanced by an electric field.

引用

页码：L1021 / L1023

页数：3

共 9 条

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