EFFECT OF ELECTRICAL-CONDUCTIVITY OF SUBSTRATE ON RF-SPUTTER-DEPOSITION OF MU-C-SI-H AT - 180-DEGREES-C

被引:4
作者
HASHIMOTO, S [1 ]
MIYASATO, T [1 ]
HIRAKI, A [1 ]
机构
[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 11期
关键词
D O I
10.1143/JJAP.22.L748
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L748 / L750
页数:3
相关论文
共 2 条
[1]   SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE [J].
HIRAKI, A ;
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MOGI, K ;
TASHIRO, M .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :277-280
[2]   FABRICATION OF SI-H ALLOY WITH PLENTY OF -SIH3 BY REACTIVE SPUTTERING ONTO LOW-TEMPERATURE SUBSTRATE [J].
MIYASATO, T ;
ABE, Y ;
TOKUMURA, M ;
IMURA, T ;
HIRAKI, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09) :L580-L582