FABRICATION OF SI-H ALLOY WITH PLENTY OF -SIH3 BY REACTIVE SPUTTERING ONTO LOW-TEMPERATURE SUBSTRATE

被引：19

作者：

MIYASATO, T ^{[1
]}

ABE, Y ^{[1
]}

TOKUMURA, M ^{[1
]}

IMURA, T ^{[1
]}

HIRAKI, A ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 09期

关键词：

D O I：

10.1143/JJAP.22.L580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L580 / L582

页数：3

共 7 条

[1] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1978, 18 (08) :4288-4300

[2]

FUKADA N, 1982, JPN J APPL PHYS 2, V21, pL532, DOI 10.1143/JJAP.21.L532

[3]

HABA M, 1982, KOTAI BUTSURI, V17, P581

[4] SI-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H-2 ATMOSPHERE [J].

HIRAKI, A ;

IMURA, T ;

MOGI, K ;

TASHIRO, M .

JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :277-280

[5]

HIRAKI A, 1982, Patent No. 64760

[6] SPONTANEOUS INCLUSION OF OXYGEN IN SPUTTER-DEPOSITED AMORPHOUS-SILICON DURING AND AFTER FABRICATION [J].

IMURA, T ;

USHITA, K ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L65-L68

[7] MICROCRYSTALLINE SI - H-FILM AND ITS APPLICATION TO SOLAR-CELLS [J].

UCHIDA, Y ;

ICHIMURA, T ;

UENO, M ;

HARUKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L586-L588

← 1 →