ELECTRON-CYCLOTRON-RESONANCE PLASMA OXIDATION STUDIES OF INP

被引：8

作者：

HU, YZ ^{[1
]}

JOSEPH, J ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] ECOLE CENT LYON,F-69130 ECULLY,FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron cyclotron resonance plasma oxidation of InP was studied using both spectroscopic and single wavelength ellipsometry employed during the oxidation process. A two layer oxide was observed with the outer layer being In rich and the inner layer P rich as confirmed from x-ray photoelectron spectroscopy and etch rate studies. Optical models and oxidation kinetics are analyzed. From positive substrate bias effects on oxidation rates, negative ion oxidant species were identified as dominant and oxide etching was observed at negative bias. Plasma oxidation. like thermal oxidation, yielded excess P near the semiconductor surface which would degrade electronic properties.

引用

页码：540 / 546

页数：7

共 24 条

[1]

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[2]

Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[3] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].