ON THE CHEMISTRY OF PASSIVATED OXIDE-INP INTERFACES

[1] BERGIGNAT E, IN PRESS SURF SCI

[2] PREPARATION AND ELECTRICAL-PROPERTIES OF INPXOY GATE INSULATORS ON INP [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 375 - 377

[3] DURAND JP, IN PRESS

[4] FALLAVIER M, UNPUB

[5] ON THE NATURE OF OXIDES ON INP-SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2082 - 2088

[6] HOLLINGER G, UNPUB

[7] JALLAGUIER M, IN PRESS REV PHYS AP

[8] AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 915 - 916

[9] N-CHANNEL INVERSION-MODE INP MISFET [J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659

[10] ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP [J]. THIN SOLID FILMS, 1984, 113 (02) : 85 - 92

[1] BERGIGNAT E, IN PRESS SURF SCI

[2] PREPARATION AND ELECTRICAL-PROPERTIES OF INPXOY GATE INSULATORS ON INP [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 375 - 377

[3] DURAND JP, IN PRESS

[4] FALLAVIER M, UNPUB

[5] ON THE NATURE OF OXIDES ON INP-SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2082 - 2088

[6] HOLLINGER G, UNPUB

[7] JALLAGUIER M, IN PRESS REV PHYS AP

[8] AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 37 (10) : 915 - 916

[9] N-CHANNEL INVERSION-MODE INP MISFET [J]. ELECTRONICS LETTERS, 1978, 14 (20) : 657 - 659

[10] ELECTRICAL-PROPERTIES OF AL2O3 AND A1PXOY DIELECTRIC LAYERS ON INP [J]. THIN SOLID FILMS, 1984, 113 (02) : 85 - 92