AN IMPROVED ANODIC OXIDE INSULATOR FOR INP METAL-INSULATED-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：31

作者：

LAUGHLIN, DH

WILMSEN, CW

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91857

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：915 / 916

页数：2

共 11 条

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[2]

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[3] N-CHANNEL INVERSION-MODE INP MISFET [J].

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[4] AN INP MIS DIODE [J].

LILE, DL ;

COLLINS, DA .

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LILE, DL ;

COLLINS, DA .

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[6] INTERFACE CHARACTERISTICS OF INP MOS CAPACITORS [J].

PANDE, KP ;

ROBERTS, GG .

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[7] POSSIBLE EXPLANATION FOR PHOTO-VOLTAIC EFFECT IN INDIUM TIN OXIDE ON INP SOLAR-CELLS [J].

SINGH, R ;

SHEWCHUN, J .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) :4588-4591

[8] ELECTRICAL PROPERTIES OF SINGLE CRYSTALS OF INDIUM OXIDE [J].

WEIHER, RL .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2834-&

[9]

Wilmsen C. W., 1975, Critical Reviews in Solid State Sciences, V5, P313, DOI 10.1080/10408437508243489

[10] ANALYSIS OF OXIDE-SEMICONDUCTOR INTERFACE USING AUGER AND ESCA AS APPLIED TO INP AND GAAS [J].

WILMSEN, CW ;

KEE, RW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1513-1517

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