A NEW APPROACH TO THRESHOLD VOLTAGE MODELING OF SHORT-CHANNEL MOSFETS

被引：10

作者：

SKOTNICKI, T ^{[1
]}

MARCINIAK, W ^{[1
]}

机构：

[1] INST ELECTRON TECHNOL CEMI,PL-02668 WARSAW,POLAND

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 11期

关键词：

D O I：

10.1016/0038-1101(86)90054-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MOSFET

引用

页码：1115 / 1127

页数：13

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