ELECTRICAL CHARACTERISTICS OF THE JUNCTION BETWEEN THE POLY(DITHIENOTHIOPHENE-DITHIENOPYRROLE) CONDUCTING COPOLYMER AND SILICON

被引：19

作者：

CAMPOS, M ^{[1
]}

CASALBOREMICELI, G ^{[1
]}

CAMAIONI, N ^{[1
]}

机构：

[1] CNR,IST FOTOCHIM & RADIAZ ALTA ENERGIA,I-40129 BOLOGNA,ITALY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 10期

关键词：

D O I：

10.1088/0022-3727/28/10/020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The rectifying barrier of poly(dithienothiophene-dithienopyrrole) (pDTDP) conducting copolymer deposited on n-Si has been investigated, Current-voltage (I-V) and capacitance-voltage (C-V) measurements were used to explore the junction properties. The results presented can be understood in terms of the thermionic emission and space charge limited current model. The pDTDP-Si contact barrier has a height of 0.21 eV from I-V measurements and 0.23 eV from C-V measurements.

引用

页码：2123 / 2127

页数：5

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