EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS

被引：35

作者：

MAUDE, DK ^{[1
]}

EAVES, L ^{[1
]}

FOSTER, TJ ^{[1
]}

PORTAL, JC ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,DEPT GENIE PHYS,F-31077 TOULOUSE,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.62.1922

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1922 / 1922

页数：1

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[7] ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY [J].

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